TRANSIENT-RESPONSE MEASUREMENT OF KINK EFFECT IN INALAS/INGAAS/INP HEMTS

被引：5
|
作者：
KRUPPA, W [1 ]
BOOS, JB [1 ]
机构：
[1] SFA INC,LANDOVER,MD 20785
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 04期
关键词：
HIGH ELECTRON MOBILITY TRANSISTORS; TRANSIENT RESPONSE;
D O I：
10.1049/el:19940037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The kink effect in InAlAs/InGaAs/InP HEMTs is examined in the time domain with the use of voltage pulses applied to the drain of the device. The transient response shows opposite slopes below and above the kink voltage associated with carrier capture and emission. The results are found to be consistent with frequency-domain dispersion measurements made on the output resistance. The causes and time constants of the transients are discussed.
引用
收藏
页码：368 / 369
页数：2
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