PICOSECOND OPTICAL BISTABILITY OF ZNS-ZNTE/GAAS MULTIPLE-QUANTUM WELLS ON REFLECTION AT ROOM-TEMPERATURE

被引：0

作者：

SHEN, DZ

FAN, XW

YANG, BJ

机构：

[1] Laboratory of Excited State Processes, Changchun Institute of Physics, Academia Sinica, Changchun, 130 021

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

OPTICAL BISTABILITY; ZNS-ZNTE MQWS; BAND FILLING EFFECT;

D O I：

10.1143/JJAP.34.1279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical bistability with picosecond switching time in ZnS-ZnTe/GaAs multiple quantum wells (MQWs) on reflection at room temperature has been studied for the first time. The research results indicate that the switching threshold from high to low state and contrast ratio for the optical bistability are about 1.2 MW/cm(2) and 3:1, respectively. The major nonlinear mechanism for the optical bistability is due to the change of refractive index caused by the band filling effect.

引用

页码：1279 / 1281

页数：3

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