PICOSECOND OPTICAL BISTABILITY OF ZNS-ZNTE/GAAS MULTIPLE-QUANTUM WELLS ON REFLECTION AT ROOM-TEMPERATURE

被引：0
|
作者：
SHEN, DZ
FAN, XW
YANG, BJ
机构：
[1] Laboratory of Excited State Processes, Changchun Institute of Physics, Academia Sinica, Changchun, 130 021
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期
关键词：
OPTICAL BISTABILITY; ZNS-ZNTE MQWS; BAND FILLING EFFECT;
D O I：
10.1143/JJAP.34.1279
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical bistability with picosecond switching time in ZnS-ZnTe/GaAs multiple quantum wells (MQWs) on reflection at room temperature has been studied for the first time. The research results indicate that the switching threshold from high to low state and contrast ratio for the optical bistability are about 1.2 MW/cm(2) and 3:1, respectively. The major nonlinear mechanism for the optical bistability is due to the change of refractive index caused by the band filling effect.
引用
收藏
页码：1279 / 1281
页数：3
相关论文
共 50 条
  • [31] Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells
    Seyyed Hossein Asadpour
    G Solookinejad
    M Panahi
    E Ahmadi Sangachin
    Chinese Physics B, 2016, (05) : 227 - 232
  • [32] Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells
    Asadpour, Seyyed Hossein
    Solookinejad, G.
    Panahi, M.
    Sangachin, E. Ahmadi
    CHINESE PHYSICS B, 2016, 25 (05)
  • [33] TEMPERATURE AND DENSITY-DEPENDENCE OF EXCITON LIFETIMES IN GAAS ALGAAS MULTIPLE-QUANTUM WELLS
    CHU, JH
    SEO, JC
    SHIN, EJ
    YU, SK
    KIM, D
    HWANG, YN
    PARK, SH
    KIM, U
    KOPEV, PS
    OPTICAL AND QUANTUM ELECTRONICS, 1995, 27 (05) : 387 - 393
  • [34] FREE-EXCITONS IN ROOM-TEMPERATURE PHOTOLUMINESCENCE OF GAAS-ALXGA1-XAS MULTIPLE QUANTUM WELLS
    DAWSON, P
    DUGGAN, G
    RALPH, HI
    WOODBRIDGE, K
    PHYSICAL REVIEW B, 1983, 28 (12): : 7381 - 7383
  • [35] Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells
    Hirayama, H
    Enomoto, Y
    Kinoshita, A
    Hirata, A
    Aoyagi, Y
    APPLIED PHYSICS LETTERS, 2002, 80 (09) : 1589 - 1591
  • [36] Room-temperature laser emission of GaInNAs-GaAs quantum wells grown on GaAs (111)B
    Miguel-Sánchez, J
    Guzmán, A
    Ulloa, JM
    Montes, M
    Hierro, A
    Muñoz, E
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (11) : 2271 - 2273
  • [37] RECOMBINATION LIFETIME OF CARRIERS IN GAAS-GAALAS QUANTUM WELLS NEAR ROOM-TEMPERATURE
    ARAKAWA, Y
    SAKAKI, H
    NISHIOKA, M
    YOSHINO, J
    KAMIYA, T
    APPLIED PHYSICS LETTERS, 1985, 46 (05) : 519 - 521
  • [38] Picosecond optical bistability in ZnSe-CdZnSe multiple quantum wells with a Fabry-Perot cavity
    Shen, DZ
    Zhang, JY
    Wang, SM
    Yang, BJ
    Fan, XW
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 805 - 808
  • [39] RAMAN-SCATTERING DUE TO INTERFACE OPTICAL PHONONS IN GAAS/ALAS MULTIPLE-QUANTUM WELLS
    SHIELDS, AJ
    CHAMBERLAIN, MP
    CARDONA, M
    EBERL, K
    PHYSICAL REVIEW B, 1995, 51 (24): : 17728 - 17739
  • [40] TEMPERATURE-DEPENDENCE OF CATHODOLUMINESCENCE FROM THIN GAAS-ALGAAS MULTIPLE-QUANTUM WELLS
    JAHN, U
    MENNIGER, J
    HEY, R
    GRAHN, HT
    APPLIED PHYSICS LETTERS, 1994, 64 (18) : 2382 - 2384
12345