INTERFACE STRUCTURE AND MISFIT DISLOCATIONS IN THIN CU FILMS ON RU(0001)

被引：104
|
作者：
POTSCHKE, GO
BEHM, RJ
机构：
[1] Institut für Kristallographie und Mineralogie, Universität München, W-8000 München 2
来源：
PHYSICAL REVIEW B | 1991年 / 44卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.44.1442
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We show, from scanning tunneling microscopy measurements, that the strain at the interface between Cu films and a Ru(0001) substrate is reduced by a structural transformation from a more tightly bound, strained pseudomorphic first Cu layer to a unidirectionally contracted second Cu layer with periodic partial misfit dislocations. These results for a two-dimensional structure confirm the mechanism of stress accommodation in strained layers predicted in the one-dimensional dislocation model of Frank and van der Merwe.
引用
收藏
页码：1442 / 1445
页数：4
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