GAP ELECTRON-MOBILITY EMPIRICALLY RELATED TO DONOR CONCENTRATION AND TEMPERATURE

被引：0
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作者：
WEICHOLD, MH
机构：
来源：
SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 09期
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D O I：
10.1016/0038-1101(85)90089-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：957 / 958
页数：2
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