GAP ELECTRON-MOBILITY EMPIRICALLY RELATED TO DONOR CONCENTRATION AND TEMPERATURE

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作者：

WEICHOLD, MH

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来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 09期

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D O I：

10.1016/0038-1101(85)90089-9

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TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：957 / 958

页数：2

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