WIDTHS OF EXCITED IMPURITY LEVELS IN PHOSPHORUS-DOPED SILICON

被引：0
|
作者：
BARRIE, R
PARENT, LG
PARSONS, RR
机构：
来源：
CANADIAN JOURNAL OF PHYSICS | 1983年 / 61卷 / 01期
关键词：
D O I：
10.1139/p83-011
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：67 / 70
页数：4
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