WIDTHS OF EXCITED IMPURITY LEVELS IN PHOSPHORUS-DOPED SILICON

被引：0
|
作者：
BARRIE, R
PARENT, LG
PARSONS, RR
机构：
来源：
CANADIAN JOURNAL OF PHYSICS | 1983年 / 61卷 / 01期
关键词：
D O I：
10.1139/p83-011
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：67 / 70
页数：4
相关论文
共 50 条
  • [21] PULSED ENDOR EFFECTS IN PHOSPHORUS-DOPED SILICON
    BROWN, IM
    SLOOP, DJ
    AMES, DP
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 355 - &
  • [22] Microdefects in heavily phosphorus-doped Czochralski silicon
    Wang, Zhenhui
    Ma, Xiangyang
    Yang, Deren
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, 2011, 178-179 : 201 - +
  • [23] PHONON-SCATTERING IN PHOSPHORUS-DOPED SILICON
    TOUAMI, BB
    OSBORNE, DV
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (33): : 6719 - 6729
  • [24] ENHANCED SPIN SUSCEPTIBILITY IN PHOSPHORUS-DOPED SILICON
    BERGGREN, KF
    PHILOSOPHICAL MAGAZINE, 1974, 30 (01): : 1 - 11
  • [25] HOPPING CONDUCTION IN PHOSPHORUS-DOPED SILICON.
    Sasaki, W.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1985, 52 (03): : 427 - 435
  • [26] ENHANCED SPIN SUSCEPTIBILITY IN PHOSPHORUS-DOPED SILICON
    DASILVA, AF
    PHYSICAL REVIEW B, 1988, 38 (14): : 10055 - 10056
  • [27] ANNEALING EFFECT IN PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON
    GNADINGER, AP
    KOSICKI, BB
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : C87 - C87
  • [28] DIFFUSION OF CARBON AND SULFUR IN PHOSPHORUS-DOPED SILICON
    GRUZIN, PL
    ZEMSKII, SV
    BULKIN, AD
    MAKAROV, NM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1241 - 1241
  • [29] HYDROGEN IN PHOSPHORUS-DOPED AND CARBON-DOPED CRYSTALLINE SILICON
    ENDROS, AL
    KRUHLER, W
    GRABMAIER, J
    PHYSICA B, 1991, 170 (1-4): : 365 - 370
  • [30] Electronic transport in phosphorus-doped silicon nanocrystal networks
    Stegner, A. R.
    Pereira, R. N.
    Klein, K.
    Lechner, R.
    Dietmueller, R.
    Brandt, M. S.
    Stutzmann, M.
    Wiggers, H.
    PHYSICAL REVIEW LETTERS, 2008, 100 (02)
12345