PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION-SPECTRA OF GAAS GROWN DIRECTLY ON SI

被引:97
|
作者
ZEMON, S
SHASTRY, SK
NORRIS, P
JAGANNATH, C
LAMBERT, G
机构
关键词
D O I
10.1016/0038-1098(86)90031-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:457 / 460
页数:4
相关论文
共 50 条
  • [31] THE PHOTOLUMINESCENCE SPECTRA OF THIN SI-DOPED GAAS-LAYERS GROWN BY MBE
    PASTRNAK, J
    OSWALD, J
    LAZNICKA, M
    BOSACCHI, A
    SALOKATVE, A
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1990, 118 (02): : 567 - 576
  • [32] Photoluminescence dark spot dynamics in GaAs grown on Si
    Wada, Naoki
    Sakai, Shiro
    Fukui, Masuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (1 B): : 864 - 868
  • [33] Photoluminescence and photoluminescence excitation spectra of AlAs/GaAs disordered superlattices with various disordered lengths
    Uno, K
    Noda, S
    Sasaki, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (5A): : 2566 - 2572
  • [34] Photoluminescence and photoluminescence excitation spectra of AlAs/GaAs disordered superlattices with various disordered lengths
    Kyoto Univ, Kyoto, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 5 A (2566-2572):
  • [35] PHOTOLUMINESCENCE DARK SPOT DYNAMICS IN GAAS GROWN ON SI
    WADA, N
    SAKAI, S
    FUKUI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 864 - 868
  • [36] PHOTOLUMINESCENCE AND EXCITATION-SPECTRA OF ZN1-XMNXSE FILMS AND SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    BYLSMA, RB
    KOSSUT, J
    BECKER, WM
    KOLODZIEJSKI, LA
    GUNSHOR, RL
    FROHNE, R
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 3011 - 3019
  • [37] METHOD FOR DETERMINATION OF BULK AND SURFACE RECOMBINATION PARAMETERS FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA
    PEKA, GP
    SHEPEL, LG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1140 - 1142
  • [38] PHOTOLUMINESCENCE EXCITATION-SPECTRA OF NITROGEN-IMPLANTED ALXGA1-XAS
    MAKITA, Y
    GONDA, S
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) : 1628 - 1630
  • [39] TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE EXCITATION-SPECTRA IN CD1-XMNXTE
    AMBRAZEVICIUS, G
    BABONAS, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 133 (01): : K45 - K48
  • [40] Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates
    王霆
    刘会赟
    张建军
    Chinese Physics Letters, 2016, (04) : 56 - 59