PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION-SPECTRA OF GAAS GROWN DIRECTLY ON SI

被引:97
|
作者
ZEMON, S
SHASTRY, SK
NORRIS, P
JAGANNATH, C
LAMBERT, G
机构
关键词
D O I
10.1016/0038-1098(86)90031-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:457 / 460
页数:4
相关论文
共 50 条
  • [11] EXCITATION-SPECTRA OF THE VISIBLE PHOTOLUMINESCENCE OF ANODIZED POROUS SILICON
    MOTOHIRO, T
    KACHI, T
    MIURA, F
    TAKEDA, Y
    HYODO, S
    NODA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (3A): : L207 - L209
  • [12] DETERMINATION OF RECOMBINATION PARAMETERS OF SEMICONDUCTORS FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA
    PEKA, GP
    SPEKTOR, SA
    SHEPEL, LG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1261 - 1263
  • [13] EXCITATION-SPECTRA OF PHOTOLUMINESCENCE BANDS IN CD1-XMNXTE
    AMBRAZEVICIUS, G
    BABONAS, G
    RUD, YV
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 125 (02): : 759 - 764
  • [14] NEAR GAP PHOTOLUMINESCENCE OF GAAS GROWN DIRECTLY ON INP
    SCHNOES, ML
    HARRIS, TD
    HOBSON, WS
    LUM, RM
    KLINGERT, JK
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 405 - 408
  • [15] PHOTOLUMINESCENCE EXCITATION-SPECTRA OF GALLIUM NITRIDE SINGLE-CRYSTALS
    SULEYMANOV, Y
    PICHUGIN, IG
    TESLENKO, SI
    MARASINA, LA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (02): : K195 - K197
  • [16] EXCITATION-SPECTRA OF DONOR-ACCEPTOR PAIR PHOTOLUMINESCENCE IN ZNTE
    NAKASHIMA, S
    HATTORI, T
    YAMAGUCHI, Y
    SOLID STATE COMMUNICATIONS, 1978, 25 (02) : 137 - 139
  • [17] PHOTOLUMINESCENCE AND EXCITATION-SPECTRA OF THE SRO-BI-3+ PHOSPHOR
    YAMASHITA, N
    IKEDA, S
    ASANO, S
    PHYSICS LETTERS A, 1987, 121 (02) : 94 - 96
  • [18] Photoluminescence study of GaAs grown on (001) Si
    Alberts, Vivian
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (11): : 6111 - 6120
  • [19] TEMPERATURE EFFECTS ON THE PHOTOLUMINESCENCE OF GAAS GROWN ON SI
    CHEN, Y
    FREUNDLICH, A
    KAMADA, H
    NEU, G
    APPLIED PHYSICS LETTERS, 1989, 54 (01) : 45 - 47
  • [20] PHOTOLUMINESCENCE STUDY OF GAAS GROWN ON (001)SI
    ALBERTS, V
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11): : 6111 - 6120