SPLITTING OF DONOR-ACCEPTOR GROUND-STATE IN ZINCBLENDE TYPE SEMICONDUCTORS

被引：0

作者：

BENOIT, C

机构：

来源：

JOURNAL DE PHYSIQUE I | 1991年 / 1卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Coulomb perturbation of a neutral donor on the nearest neutral acceptor gives rise to a splitting in zinc-blende type semiconductors. Good agreement of experimental data with the model is found in CdTe and GaAs. Possible reasons of discrepancy found in ZnSe and GaP are discussed.

引用

页码：317 / 321

页数：5

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