SPLITTING OF DONOR-ACCEPTOR GROUND-STATE IN ZINCBLENDE TYPE SEMICONDUCTORS

被引：0
|
作者：
BENOIT, C
机构：
来源：
JOURNAL DE PHYSIQUE I | 1991年 / 1卷 / 03期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The Coulomb perturbation of a neutral donor on the nearest neutral acceptor gives rise to a splitting in zinc-blende type semiconductors. Good agreement of experimental data with the model is found in CdTe and GaAs. Possible reasons of discrepancy found in ZnSe and GaP are discussed.
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页码：317 / 321
页数：5
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