共 50 条
- [41] Silicide Formation of Atomic Layer Deposition Co Using Ti and Ru Capping Layer KOREAN JOURNAL OF MATERIALS RESEARCH, 2012, 22 (04): : 202 - 206
- [42] EFFECTS OF PHOSPHORUS IMPLANTATION AND POST ANNEALING ON PALLADIUM SILICIDE SCHOTTKY-BARRIER DIODE CHARACTERISTICS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (10): : 1345 - 1347
- [46] Analytical studies of nickel silicide formation through a thin Ti layer Applied Surface Science, 1996, 104-105 : 218 - 222
- [47] Self formation of Si nanostructured layer at the metal silicide/silicon interface MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2003, 23 (1-2): : 181 - 186
- [48] Transition-metal silicide layer formation, the phases of mixed silicides MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES, 1997, 248-2 : 339 - 344
- [50] Novel Schottky barrier MOSFET with dual-layer silicide source/drain structure 2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 69 - 72