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- [2] On the formation of a homogeneous barrier at the palladium silicide silicon interface PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 614 - 616
- [3] FORMATION OF PALLADIUM SILICIDE BY RAPID THERMAL ANNEALING APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (03): : 141 - 144
- [6] Electron transport and barrier inhomogeneities in palladium silicide Schottky diodes APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1997, 65 (4-5): : 497 - 503
- [7] Electron transport and barrier inhomogeneities in palladium silicide Schottky diodes Appl Phys A, 4-5 (497-503):
- [8] Electron transport and barrier inhomogeneities in palladium silicide Schottky diodes Applied Physics A, 1997, 65 : 497 - 503
- [10] RADIATION ENHANCED SILICIDE FORMATION IN PALLADIUM COATED SILICON JOURNAL OF METALS, 1981, 33 (09): : A9 - A9