Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer

被引：4

作者：

Suryana, Risa ^{[1
]}

Nakatsuka, Osamu ^{[1
]}

Zaima, Shigeaki ^{[1
]}

机构：

[1] Nagoya Univ, Dept Crystalline Mat Sci, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 05期

关键词：

ELECTRICAL CHARACTERISTICS; GROWTH; NISI2; CONTACTS; PD2SI;

D O I：

10.1143/JJAP.49.05FA09

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of palladium silicide on Pd/Ti/Si systems with and without heavy B-doping has been investigated. For comparison, Pd2Si was also formed on Pd/Si systems. The agglomeration of Pd2Si could be retarded in Pd/Ti/Si systems with and without B-doping after annealing at 600 degrees C. The existence of the Ti layer could improve the thermal stability of Pd2Si. In addition, epitaxial or highly oriented Pd2Si formed in Pd/Ti/Si systems. The two orientation relationships of Pd2Si layers were identified to be Pd2Si[1 (1) over bar0] parallel to Si[(1) over bar 10] and Pd2Si[110] parallel to Si[001], and Pd2Si[100] parallel to Si[(1) over bar 10] and Pd2Si[001] parallel to Si[001]. The formation of strained epitaxial Pd2Si layers was found in Pd/Ti/Si systems. The improvement in the thermal stability of Pd2Si and the formation of epitaxial or highly oriented Pd2Si in Pd/Ti/Si systems were observed with and without B-doping. (C) 2010 The Japan Society of Applied Physics

引用

页码：05FA091 / 05FA095

页数：5

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