Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer

被引：4
|
作者：
Suryana, Risa [1 ]
Nakatsuka, Osamu [1 ]
Zaima, Shigeaki [1 ]
机构：
[1] Nagoya Univ, Dept Crystalline Mat Sci, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 05期
关键词：
ELECTRICAL CHARACTERISTICS; GROWTH; NISI2; CONTACTS; PD2SI;
D O I：
10.1143/JJAP.49.05FA09
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation of palladium silicide on Pd/Ti/Si systems with and without heavy B-doping has been investigated. For comparison, Pd2Si was also formed on Pd/Si systems. The agglomeration of Pd2Si could be retarded in Pd/Ti/Si systems with and without B-doping after annealing at 600 degrees C. The existence of the Ti layer could improve the thermal stability of Pd2Si. In addition, epitaxial or highly oriented Pd2Si formed in Pd/Ti/Si systems. The two orientation relationships of Pd2Si layers were identified to be Pd2Si[1 (1) over bar0] parallel to Si[(1) over bar 10] and Pd2Si[110] parallel to Si[001], and Pd2Si[100] parallel to Si[(1) over bar 10] and Pd2Si[001] parallel to Si[001]. The formation of strained epitaxial Pd2Si layers was found in Pd/Ti/Si systems. The improvement in the thermal stability of Pd2Si and the formation of epitaxial or highly oriented Pd2Si in Pd/Ti/Si systems were observed with and without B-doping. (C) 2010 The Japan Society of Applied Physics
引用
收藏
页码：05FA091 / 05FA095
页数：5
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