Irregular growth of PECVD-Ti silicide film on doped Si substrates

被引：0
|
作者：
Tai, K [1 ]
Harada, Y [1 ]
Matsumoto, M [1 ]
Oki, H [1 ]
机构：
[1] Oki Elect Ind Co Ltd, LSI Prod Div, Hachioji, Tokyo 1938550, Japan
来源：
PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Plasma enhanced chemical vapor deposition (PECVD) Ti films deposited on several kinds of Si substrates were evaluated. We have found that a irregular Ti silicide growth occurred on B-ion implanted substrates while no irregular growth is observed on other types of substrates. No irregular growth occurred when CVD-Ti silicide film had the TiSi phase whereas the irregular growth occurred with the C49-TiSi2 formation. It has been clarified that C49-TiSi2 formation during deposition causes the irregular growth of CVD-Ti silicide film on B-ion implanted Si substrate.
引用
收藏
页码：64 / 66
页数：3
相关论文
共 50 条
  • [1] Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer
    Suryana, Risa
    Nakatsuka, Osamu
    Zaima, Shigeaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) : 05FA091 - 05FA095
  • [2] PECVD growth of a-Si1-xCx:H thin film on Si(111) substrates by ion species
    Hirai, M
    Miyatake, M
    Kusaka, M
    Iwami, M
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 1043 - 1046
  • [3] Silicide formation in the Ta/Ti/Si system by reaction of codeposited Ta and Ti with Si (100) and Si (111) substrates
    Pelleg, J
    Goldshleger, N
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) : 1531 - 1539
  • [4] Silicide formation in the Ta/Ti/Si system by reaction of codeposited Ta and Ti with Si (100) and Si (111) substrates
    J Appl Phys, 3 (1531):
  • [5] Growth and characterization of Tb silicide nanostructures on Si(hhk) substrates
    Appelfeller, Stephan
    Franz, Martin
    Freter, Lars
    Hassenstein, Christian
    Jirschik, Hans-Ferdinand
    Daehne, Mario
    PHYSICAL REVIEW MATERIALS, 2019, 3 (12)
  • [6] TITANIUM SILICIDE GROWTH BY RAPID-THERMAL PROCESSING OF TI FILMS DEPOSITED ON LIGHTLY DOPED AND HEAVILY DOPED SILICON SUBSTRATES
    DELANEROLLE, N
    HOFFMAN, D
    MA, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1689 - 1695
  • [7] EPITAXIAL-GROWTH OF PLATINUM SILICIDE LAYERS ON (111) SI SUBSTRATES
    CHEN, JR
    HEH, TS
    LIN, MP
    SURFACE SCIENCE, 1985, 162 (1-3) : 657 - 662
  • [8] Study of Ti-silicide film used in a Si:H solar cells
    Shantou Univ, Shantou, China
    Gongneng Cailiao, 3 (309-311):
  • [9] SILICIDE-FORMATION-INDUCED DEFECTS IN SI SUBSTRATES IN TI/SI AND NI/SI SYSTEMS BY A MONOENERGETIC POSITRON BEAM
    WEI, L
    TANIGAWA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 290 - 294
  • [10] Effect of purity of Ti on growth behaviour of Ti silicide formed in bulk Ti/Si diffusion couple
    Kyushu Inst of Technology, Kitakyushu, Japan
    Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, 1996, 60 (01): : 29 - 36
12345