Irregular growth of PECVD-Ti silicide film on doped Si substrates

被引：0
|
作者：
Tai, K [1 ]
Harada, Y [1 ]
Matsumoto, M [1 ]
Oki, H [1 ]
机构：
[1] Oki Elect Ind Co Ltd, LSI Prod Div, Hachioji, Tokyo 1938550, Japan
来源：
PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Plasma enhanced chemical vapor deposition (PECVD) Ti films deposited on several kinds of Si substrates were evaluated. We have found that a irregular Ti silicide growth occurred on B-ion implanted substrates while no irregular growth is observed on other types of substrates. No irregular growth occurred when CVD-Ti silicide film had the TiSi phase whereas the irregular growth occurred with the C49-TiSi2 formation. It has been clarified that C49-TiSi2 formation during deposition causes the irregular growth of CVD-Ti silicide film on B-ion implanted Si substrate.
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页码：64 / 66
页数：3
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