DEVICE ISOLATION BY OXYGEN IMPLANTATION IN N-TYPE INDIUM-PHOSPHIDE

被引：3
|
作者：
THOMPSON, PE
BINARI, SC
DIETRICH, HB
HENRY, RL
机构：
来源：
SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 8-9期
关键词：
D O I：
10.1016/0038-1101(84)90031-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：817 / 818
页数：2
相关论文
共 50 条
  • [41] CHARACTERIZATION OF N-TYPE SEMICONDUCTING INDIUM-PHOSPHIDE PHOTOELECTRODES - STABILIZATION TO PHOTO-ANODIC DISSOLUTION IN AQUEOUS-SOLUTIONS OF TELLURIDE AND DITELLURIDE IONS
    ELLIS, AB
    BOLTS, JM
    WRIGHTON, MS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) : 1603 - 1607
  • [42] FABRICATION OF SCHOTTKY BARRIERS ON NORMAL-TYPE INDIUM-PHOSPHIDE SAMPLES
    ASTAKHOVA, EF
    GLORIOZOVA, RI
    KOMISSAROVA, NP
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1981, 24 (06) : 1537 - 1539
  • [43] ELECTRICAL-PROPERTIES OF VAPOR EPITAXIAL INDIUM-PHOSPHIDE GROWN IN THE PRESENCE OF OXYGEN
    HALES, MC
    KNIGHT, JR
    JOURNAL OF CRYSTAL GROWTH, 1979, 46 (04) : 582 - 584
  • [44] CHARACTERIZATION OF N-TYPE SEMICONDUCTING INDIUM-PHOSPHIDE PHOTOELECTRODES - STABILIZATION TO PHOTO-ANODIC DISSOLUTION IN AQUEOUS-SOLUTIONS OF TELLURIDE-DITELLURIDE IONS
    BOLTS, JM
    ELLIS, AB
    WRIGHTON, MS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C129 - C129
  • [45] STUDY OF THE SCHOTTKY-BARRIER AND DETERMINATION OF THE ENERGETIC POSITIONS OF BAND EDGES AT THE N-TYPE AND P-TYPE GALLIUM INDIUM-PHOSPHIDE ELECTRODE-ELECTROLYTE INTERFACE
    KOCHA, SS
    TURNER, JA
    NOZIK, AJ
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1994, 367 (1-2): : 27 - 30
  • [46] Ohmic Contact of Cadmium Oxide, a Transparent Conducting Oxide, to n-type Indium Phosphide
    Ou, Fang
    Buchholz, D. Bruce
    Yi, Fei
    Liu, Boyang
    Hseih, Chunhan
    Chang, Robert P. H.
    Ho, Seng-Tiong
    ACS APPLIED MATERIALS & INTERFACES, 2011, 3 (04) : 1341 - 1345
  • [47] PHOTOELECTROCHEMICAL PRODUCTION OF HYDROGEN AT CHEMICALLY DERIVATIZED P-TYPE INDIUM-PHOSPHIDE
    MALLOUK, TE
    DAUBE, KA
    SPOOL, A
    WRIGHTON, MS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C129 - C129
  • [48] INDUCED DEFECTS IN PLASMA-ETCHED P-TYPE INDIUM-PHOSPHIDE
    LUO, JK
    THOMAS, H
    PEARSALL, NM
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (01) : 168 - 171
  • [49] THERMAL AND PHOTON-ASSISTED INTERACTION OF AMMONIA, SILANE AND OXYGEN WITH INDIUM-PHOSPHIDE SUBSTRATES
    HOUZAY, F
    MOISON, JM
    LICOPPE, C
    NISSIM, YI
    VACUUM, 1990, 41 (1-3) : 718 - 719
  • [50] Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen
    Wang, LW
    Huang, JP
    Duo, XZ
    Song, ZT
    Lin, CL
    Zetterling, CM
    Östling, M
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (12) : 1551 - 1555
12345