DEVICE ISOLATION BY OXYGEN IMPLANTATION IN N-TYPE INDIUM-PHOSPHIDE

被引：3
|
作者：
THOMPSON, PE
BINARI, SC
DIETRICH, HB
HENRY, RL
机构：
来源：
SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 8-9期
关键词：
D O I：
10.1016/0038-1101(84)90031-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：817 / 818
页数：2
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