ELECTRON-MOBILITY IN 2 COUPLED DELTA-LAYERS

被引：25

作者：

HAI, GQ ^{[1
]}

STUDART, N ^{[1
]}

PEETERS, FM ^{[1
]}

机构：

[1] UNIV ANTWERP,DEPT PHYS,B-2610 ANTWERP,BELGIUM

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.52.11273

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results.

引用

页码：11273 / 11276

页数：4

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