ELECTRON-MOBILITY IN 2 COUPLED DELTA-LAYERS

被引：25
|
作者：
HAI, GQ [1 ]
STUDART, N [1 ]
PEETERS, FM [1 ]
机构：
[1] UNIV ANTWERP,DEPT PHYS,B-2610 ANTWERP,BELGIUM
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.52.11273
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results.
引用
收藏
页码：11273 / 11276
页数：4
相关论文
共 50 条
  • [21] ELECTRON-MOBILITY ANALYSIS OF NORMAL-SI INVERSION-LAYERS
    VASS, E
    LASSNIG, R
    GORNIK, E
    SURFACE SCIENCE, 1982, 113 (1-3) : 223 - 227
  • [22] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES
    SUN, SC
    PLUMMER, JD
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 562 - 573
  • [23] Quantum interference effects in delta-layers of boron in silicon
    Krasovitsky, Vit.B.
    Komnik, Yu.F.
    Myronov, M.
    Whall, T.E.
    Fizika Nizkikh Temperatur (Kharkov), 2000, 26 (08):
  • [24] HIGH ELECTRON-MOBILITY TRANSISTORS
    HIYAMIZU, S
    SURFACE SCIENCE, 1986, 170 (1-2) : 727 - 741
  • [25] Structural properties and electronic states of carbon delta-layers in GaAs
    Winking, L
    Wenderoth, M
    Reusch, TCG
    Ulbrich, RG
    Wilbrandt, PJ
    Kirchheim, R
    Malzer, S
    Döhler, G
    Physics of Semiconductors, Pts A and B, 2005, 772 : 151 - 152
  • [26] ELECTRON-MOBILITY IN CADMIUM PHOSPHIDE
    RADAUTSAN, SI
    ARUSHANOV, EK
    LASHKUL, AV
    NATEPROV, AN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09): : 1108 - 1110
  • [27] Contactless Characterization of Manganese and Carbon Delta-Layers in Gallium Arsenide
    Komkov, O. S.
    Kudrin, A. V.
    SEMICONDUCTORS, 2017, 51 (11) : 1420 - 1426
  • [28] THE HIGH ELECTRON-MOBILITY TRANSISTOR
    GERING, MZI
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1988, 84 (02) : 78 - 81
  • [29] HIGH ELECTRON-MOBILITY TRANSISTORS
    MIMURA, T
    ABE, M
    KOBAYASHI, M
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1985, 21 (03): : 370 - 379
  • [30] EFFECT OF NEUTRAL SCATTERERS ON ELECTRON-MOBILITY IN SILICON (100) INVERSION-LAYERS
    NACHEV, I
    VELCHEV, N
    ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1984, 55 (01): : 33 - 39
12345