SELF-CONSISTENT CALCULATION OF THE INTERNAL STRAIN PARAMETER OF SILICON

被引：14

作者：

SANCHEZDEHESA, J

TEJEDOR, C

VERGES, JA

机构：

[1] UNIV AUTONOMA MADRID,CSIC,INST FIS ESTADO SOLIDO,MADRID 34,SPAIN

[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.26.5960

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5960 / 5962

页数：3

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