SELF-CONSISTENT CALCULATION OF THE INTERNAL STRAIN PARAMETER OF SILICON

被引：14
|
作者：
SANCHEZDEHESA, J
TEJEDOR, C
VERGES, JA
机构：
[1] UNIV AUTONOMA MADRID,CSIC,INST FIS ESTADO SOLIDO,MADRID 34,SPAIN
[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
来源：
PHYSICAL REVIEW B | 1982年 / 26卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.26.5960
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5960 / 5962
页数：3
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