POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE

被引:0
|
作者
LAI, CS
LEI, TF
LEE, CL
CHAO, TS
机构
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 300,TAIWAN
[2] NATL NANO DEVICE LAB,HSINCHU 300,TAIWAN
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The post-polysilicon gate-process-induced degradation on the underlying gate oxide is studied. The degradation includes an increase in the electron trapping rate and a decrease in the charge-to-breakdown, Q(bd), Of the gate oxide, It is found that N2O nitrided gate oxide is more robust than O-2 gate oxide in resisting the degradation, Also, to grow a thin polyoxide on the polysilicon-gate in N2O rather than in O-2 lessens the degradation on the underlying gate oxide, It is nitrogen, which diffuses through the polysilicon gate and piles up at both polysilicon/oxide and oxide/silicon-substrate interfaces, that improves the oxide quality for the N2O process.
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页码:470 / 472
页数:3
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