TERRACING AND STEP BUNCHING IN INTERFACES OF MOLECULAR-BEAM EPITAXY-GROWN (AL)GAAS MULTILAYERS

被引：13
|
作者：
ALBREKTSEN, O
MEIER, HP
ARENT, DJ
SALEMINK, HWM
机构：
[1] SWISS FED INST TECHNOL,INST QUANTUM ELECTR,CH-8093 ZURICH,SWITZERLAND
[2] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 17期
关键词：
D O I：
10.1063/1.109466
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth terraces in molecular beam epitaxy-grown AlxGa1-xAs multilayers are observed on the ultrahigh vacuum cleaved (110) cross-sectional plane using scanning tunneling microscopy. Under regular growth conditions on 2-degrees off oriented vicinal surfaces, we observe step bunching of 2-8 atomic layers and a corresponding extension of the terrace length instead of monolayer steps. These results demonstrate that the roughness of quantum confinement layers can be studied down to the atomic scale in a direct way.
引用
收藏
页码：2105 / 2107
页数：3
相关论文
共 50 条
  • [41] PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF GAAS GROWN ON SI BY MOLECULAR-BEAM EPITAXY
    BERNIER, G
    BEERENS, J
    DEBOECK, J
    DENEFFE, K
    VANHOOF, C
    BORGHS, G
    SOLID STATE COMMUNICATIONS, 1989, 69 (07) : 727 - 731
  • [42] ALGAAS/GE/GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    WANG, Y
    BARUCH, N
    WANG, WI
    CHENEY, ME
    HUANG, CI
    SCHERER, RL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1300 - 1302
  • [43] MOLECULAR-BEAM EPITAXY ALGAAS/GAAS GROWN IN THE PRESENCE OF HYDROGEN
    PAO, YC
    LIU, D
    HARRIS, JS
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 305 - 308
  • [44] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    DAVIES, GJ
    ANDREWS, DA
    HECKINGBOTTOM, R
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218
  • [45] UNINTENTIONAL INDIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    MYERS, DR
    DAWSON, LR
    KLEM, JF
    BRENNAN, TM
    HAMMONS, BE
    SIMONS, DS
    COMAS, J
    PELLEGRINO, J
    APPLIED PHYSICS LETTERS, 1990, 57 (22) : 2321 - 2323
  • [46] SEMIINSULATING GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    KORDOS, P
    FORSTER, A
    BETKO, J
    MORVIC, M
    NOVAK, J
    APPLIED PHYSICS LETTERS, 1995, 67 (07) : 983 - 985
  • [47] TRANSIENT PHOTOCONDUCTIVITY IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    WERNER, A
    MOUSTAKAS, TD
    KUNST, M
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 461 - 466
  • [48] MODELING THE DIFFUSION OF GROWN-IN BE IN MOLECULAR-BEAM EPITAXY GAAS
    HU, JC
    DEAL, MD
    PLUMMER, JD
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1595 - 1605
  • [49] DETECTION OF OXYGEN INCORPORATED IN MOLECULAR-BEAM EPITAXY-GROWN GAAS-ON-ALAS INTERFACES AND ALAS LAYERS BY SECONDARY-ION MASS-SPECTROMETRY
    SOMEYA, T
    AKIYAMA, H
    KADOYA, Y
    NODA, T
    MATSUSUE, T
    NOGE, H
    SAKAKI, H
    APPLIED PHYSICS LETTERS, 1993, 63 (14) : 1924 - 1926
  • [50] Molecular beam epitaxy-grown ZnSe nanowires
    Chan, S. K.
    Liu, N.
    Cai, Y.
    Wang, N.
    Wong, G. K. L.
    Sou, I. K.
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (06) : 1246 - 1250
12345