TERRACING AND STEP BUNCHING IN INTERFACES OF MOLECULAR-BEAM EPITAXY-GROWN (AL)GAAS MULTILAYERS

被引：13
|
作者：
ALBREKTSEN, O
MEIER, HP
ARENT, DJ
SALEMINK, HWM
机构：
[1] SWISS FED INST TECHNOL,INST QUANTUM ELECTR,CH-8093 ZURICH,SWITZERLAND
[2] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 17期
关键词：
D O I：
10.1063/1.109466
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth terraces in molecular beam epitaxy-grown AlxGa1-xAs multilayers are observed on the ultrahigh vacuum cleaved (110) cross-sectional plane using scanning tunneling microscopy. Under regular growth conditions on 2-degrees off oriented vicinal surfaces, we observe step bunching of 2-8 atomic layers and a corresponding extension of the terrace length instead of monolayer steps. These results demonstrate that the roughness of quantum confinement layers can be studied down to the atomic scale in a direct way.
引用
收藏
页码：2105 / 2107
页数：3
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