SI AS A DIFFUSION BARRIER FOR GE/GAAS HETEROJUNCTIONS

被引：20
|
作者：
STRITE, S [1 ]
UNLU, MS [1 ]
ADOMI, K [1 ]
MORKOC, H [1 ]
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 17期
关键词：
D O I：
10.1063/1.103113
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We compare the electrical characteristics, before and after annealing, of p-Ge/N-GaAs heterojunction diodes to similar diodes which incorporate a nominally 10 Å layer of pseudomorphic Si at the Ge/GaAs interface. Both types of diodes exhibit excellent current-voltage characteristics before annealing. Diodes having no Si interlayer show significant degradation after a 20 min anneal at 640 °C. Diodes incorporating the Si interlayer retain excellent diode characteristics after a 20 min anneal at temperatures as high as 720 °C.
引用
收藏
页码：1673 / 1675
页数：3
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