SI AS A DIFFUSION BARRIER FOR GE/GAAS HETEROJUNCTIONS

被引：20

作者：

STRITE, S ^{[1
]}

UNLU, MS ^{[1
]}

ADOMI, K ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 17期

关键词：

D O I：

10.1063/1.103113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the electrical characteristics, before and after annealing, of p-Ge/N-GaAs heterojunction diodes to similar diodes which incorporate a nominally 10 Å layer of pseudomorphic Si at the Ge/GaAs interface. Both types of diodes exhibit excellent current-voltage characteristics before annealing. Diodes having no Si interlayer show significant degradation after a 20 min anneal at 640 °C. Diodes incorporating the Si interlayer retain excellent diode characteristics after a 20 min anneal at temperatures as high as 720 °C.

引用

页码：1673 / 1675

页数：3

共 50 条

[21] PREPARATION AND PROPERTIES OF GAAS-GAP, GAAS-GE, AND GAP-GE HETEROJUNCTIONS
WEINSTEIN, M
BELL, RO
MENNA, AA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (06) : 674 - 682
[22] ABRUPT AVALANCHE BREAKDOWN IN GAAS-GE HETEROJUNCTIONS
JAIN, FC
MELEHY, MA
INTERNATIONAL JOURNAL OF ELECTRONICS, 1975, 38 (06) : 807 - 808
[23] PRODUCTION AND PROPERTIES OF HETEROJUNCTIONS ON ZNSE, GE, GAAS, GAP
IVANOV, VA
MURAVYOVA, KK
KALINKIN, IP
SAKSEEV, DA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1977, (02): : 82 - 87
[24] THE INTERFACE TRANSPORT PROPERTIES OF GE-GAAS HETEROJUNCTIONS
ESAKI, L
HOWARD, WE
HEER, J
SURFACE SCIENCE, 1964, 2 : 127 - 135
[25] AUTODOPING EFFECTS AT INTERFACE OF GAAS-GE HETEROJUNCTIONS
LADD, GO
FEUCHT, DL
METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 609 - &
[26] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS
FANG, FF
HOWARD, WE
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &
[27] PREPARATION OF GE-GAAS HETEROJUNCTIONS BY VACUUM EVAPORATION
RYU, I
TAKAHASHI, K
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (11) : 850 - +
[28] REVERSE CURRENTS IN P+(GE)-(GAAS) HETEROJUNCTIONS
AKOPYAN, AA
GRIBNIKOV, ZS
KONAKOVA, RV
TKHORIK, YA
SHVARTS, YM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (09): : 1182 - 1184
[29] EVIDENCE OF TUNNELING IN NONDEGENERATE GE-GAAS HETEROJUNCTIONS
RIBEN, AR
FEUCHT, DL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (11) : 534 - &
[30] OBSERVATION OF MISFIT DISLOCATIONS IN GAAS-GE HETEROJUNCTIONS
KRAUSE, GO
TEAGUE, EC
APPLIED PHYSICS LETTERS, 1967, 10 (09) : 251 - &

← 1 2 3 4 5 →