SOME ELECTRICAL AND OPTICAL-PROPERTIES OF NICKEL-RELATED DEEP LEVELS IN SILICON

被引：3
|
作者：
BARTOS, J [1 ]
TESAR, L [1 ]
机构：
[1] TESLA ROZNOV NP, CS-75661 ROZNOV, CZECHOSLOVAKIA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1990年 / 122卷 / 02期
关键词：
D O I：
10.1002/pssa.2211220222
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon wafers with p-n junctions are contaminated by nickel and the temperature behaviour of the reverse current of these p-n junctions is investigated. Nickel-related deep energy levels are studied by DLTS measurement. The dominant energy level of Ni is at E(v) + 0.31 eV. The illumination and annealing sensitivity of this level is also observed. An attempt is made to explain qualitatively this phenomenon.
引用
收藏
页码：607 / 616
页数：10
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