INTRINSIC ABSORPTION-SPECTROSCOPY AND RELATED PHYSICAL QUANTITIES OF NARROW-GAP SEMICONDUCTORS HG1-XCDXTE

被引：26
|
作者：
CHU, JH
MI, ZG
TANG, DY
机构：
[1] Shanghai Institute of Technical Physics, Academia Sinica, Shanghai
来源：
INFRARED PHYSICS | 1991年 / 32卷
关键词：
D O I：
10.1016/0020-0891(91)90110-2
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The intrinasic optical obsorption has been measured for him film samples made from bulk Hg(1-x)Cd(x)Te with x ranging from 0.165 to 0.45 and a temperature from 4.2 to 300 K. The energy gap E(g), momentum matrix P, effective mass of heavy hole and spin-orbit splitting have been obtained from fitting calculations of absorption curves. The temperature coefficient of energy gap versus composition and the energy gap versus composition and temperature have been derived based on the experimental results. The B-M shift, the Urbach absorption tail and the intrinsic carrier concentration n(1) are also discussed in this paper.
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收藏
页码：195 / 211
页数：17
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