INTRINSIC ABSORPTION-SPECTROSCOPY AND RELATED PHYSICAL QUANTITIES OF NARROW-GAP SEMICONDUCTORS HG1-XCDXTE

被引：26
|
作者：
CHU, JH
MI, ZG
TANG, DY
机构：
[1] Shanghai Institute of Technical Physics, Academia Sinica, Shanghai
来源：
INFRARED PHYSICS | 1991年 / 32卷
关键词：
D O I：
10.1016/0020-0891(91)90110-2
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The intrinasic optical obsorption has been measured for him film samples made from bulk Hg(1-x)Cd(x)Te with x ranging from 0.165 to 0.45 and a temperature from 4.2 to 300 K. The energy gap E(g), momentum matrix P, effective mass of heavy hole and spin-orbit splitting have been obtained from fitting calculations of absorption curves. The temperature coefficient of energy gap versus composition and the energy gap versus composition and temperature have been derived based on the experimental results. The B-M shift, the Urbach absorption tail and the intrinsic carrier concentration n(1) are also discussed in this paper.
引用
收藏
页码：195 / 211
页数：17
相关论文
共 50 条
  • [31] Magnetophonon oscillations in the longitudinal magnetothermal EMF of narrow gap Hg1-xCdxTe
    Baars, J
    Littler, CL
    Brink, D
    Bruder, M
    NARROW GAP SEMICONDUCTORS 1995, 1995, (144): : 50 - 54
  • [32] MICROWAVE PHOTOCONDUCTIVITY OF WARM ELECTRONS IN ZERO-GAP HG1-XCDXTE SEMICONDUCTORS
    ARAPOV, YG
    DAVYDOV, AB
    SHTRAPENIN, GL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (07): : 742 - 745
  • [33] CAPACITANCE-VOLTAGE CHARACTERISTICS OF P-N-JUNCTION OF THE NARROW BAND-GAP SEMICONDUCTORS HG1-XCDXTE
    LIN, H
    TANG, DY
    CHINESE PHYSICS, 1989, 9 (01): : 223 - 230
  • [34] Detection of terahertz and sub-terahertz wave radiation based on hot-carrier effect in narrow-gap Hg1-xCdxTe
    Zabudsky, V.
    Dobrovolsky, V.
    Momot, N.
    OPTO-ELECTRONICS REVIEW, 2010, 18 (03) : 300 - 304
  • [35] ELECTROPHYSICAL PROPERTIES OF NEUTRON-IRRADIATED NARROW-BAND SEMICONDUCTORS HG1-XCDXTE
    VOITSEKHOVSKII, AV
    VOLOSHIN, OV
    GOLMAN, MB
    KOKHANENKO, AP
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (08): : 118 - 121
  • [36] DEEP LEVEL STUDIES OF HG1-XCDXTE .1. NARROW-BAND-GAP SPACE-CHARGE SPECTROSCOPY
    POLLA, DL
    JONES, CE
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5118 - 5131
  • [37] Time resolved photoluminescence spectroscopy of narrow gap Hg1-xCdxTe/CdyHg1-yTe quantum well heterostructures
    Morozov, S. V.
    Rumyantsev, V. V.
    Antonov, A. V.
    Kadykov, A. M.
    Maremyanin, K. V.
    Kudryavtsev, K. E.
    Mikhailov, N. N.
    Dvoretskii, S. A.
    Gavrilenko, V. I.
    APPLIED PHYSICS LETTERS, 2014, 105 (02)
  • [38] WARM ELECTRON EFFECTS IN NARROW GAP HG1-XCDXTE ALLOYS AT AMBIENT-TEMPERATURES
    ELLIOTT, CT
    SPAIN, IL
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (04): : 727 - 735
  • [39] LOW-TEMPERATURE ANOMALY IN THE CONDUCTIVITY OF ZERO-GAP SEMICONDUCTORS HG1-XCDXTE
    ARAPOV, YG
    AKHMEDOVA, FI
    DAVYDOV, AB
    TSIDILKOVSKII, IM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 32 - 35
  • [40] BELOW-GAP ABSORPTION AND PRECIPITATION IN N-TYPE HG1-XCDXTE
    QIAN, DR
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (02): : 573 - 579
12345