EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS

被引：50
作者：
ARNOLD, E
ABOWITZ, G
机构：
来源：
APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 09期
关键词：
D O I：
10.1063/1.1754779
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：344 / &
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