SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：237
作者：
HOFSTEIN, SR
HEIMAN, FP
机构：
来源：
PROCEEDINGS OF THE IEEE | 1963年 / 51卷 / 09期
关键词：
D O I：
10.1109/PROC.1963.2488
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1190 / &
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