STRUCTURE OF (111) CDTE EPILAYERS ON MISORIENTED (001) GAAS

被引：28

作者：

LIGEON, E ^{[1
]}

CHAMI, C ^{[1
]}

DANIELOU, R ^{[1
]}

FEUILLET, G ^{[1
]}

FONTENILLE, J ^{[1
]}

SAMINADAYAR, K ^{[1
]}

PONCHET, A ^{[1
]}

CIBERT, J ^{[1
]}

GOBIL, Y ^{[1
]}

TATARENKO, S ^{[1
]}

机构：

[1] UNIV JOSEPH FOURIER,SPECT PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.345512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results concerning [111]CdTe growth on misoriented (001) GaAs substrates are presented and discussed. Growing CdTe on GaAs substrates with Ga steps results in twin-free layers, which is not the case for As steps. The tilt of the (111) CdTe planes with respect to the (001) GaAs planes is reported versus the GaAs substrate misorientation. We propose a model that establishes a correspondence between the measured tilt and the presence of interface dislocations as observed by high-resolution electron microscopy. This model also takes into account the effects of the surface morphology on the suppression of twins.

引用

页码：2428 / 2433

页数：6

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