STRUCTURE OF (111) CDTE EPILAYERS ON MISORIENTED (001) GAAS

被引：28

作者：

LIGEON, E ^{[1
]}

CHAMI, C ^{[1
]}

DANIELOU, R ^{[1
]}

FEUILLET, G ^{[1
]}

FONTENILLE, J ^{[1
]}

SAMINADAYAR, K ^{[1
]}

PONCHET, A ^{[1
]}

CIBERT, J ^{[1
]}

GOBIL, Y ^{[1
]}

TATARENKO, S ^{[1
]}

机构：

[1] UNIV JOSEPH FOURIER,SPECT PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.345512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results concerning [111]CdTe growth on misoriented (001) GaAs substrates are presented and discussed. Growing CdTe on GaAs substrates with Ga steps results in twin-free layers, which is not the case for As steps. The tilt of the (111) CdTe planes with respect to the (001) GaAs planes is reported versus the GaAs substrate misorientation. We propose a model that establishes a correspondence between the measured tilt and the presence of interface dislocations as observed by high-resolution electron microscopy. This model also takes into account the effects of the surface morphology on the suppression of twins.

引用

页码：2428 / 2433

页数：6

共 50 条

[21] Nanoindentation studies of (111) GaAs/InP epilayers
Navamathavan, R
Arivuoli, D
Attolini, G
Pelosi, C
APPLIED SURFACE SCIENCE, 2001, 180 (1-2) : 119 - 125
[22] Relaxation mechanisms in single InxGa1-xAs epilayers grown on misoriented GaAs((111)over-bar)B substrates
Edirisinghe, SP
StatonBevan, AE
Grey, R
JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) : 4870 - 4876
[23] Correlation between yellow emission and misoriented structure in GaN epilayers
Cha, OH
Jeong, MS
Ko, DK
Lee, J
Nahm, KS
Suh, EK
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 48 (03) : 464 - 467
[24] GaN epilayers on misoriented substrates
Trager-Cowan, C
McArthur, S
Middleton, PG
O'Donnell, KP
Zubia, D
Hersee, SD
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 235 - 238
[25] LOW DEFECT DENSITY CDTE(111)-GAAS(001) HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY
BALLINGALL, JM
TAKEI, WJ
FELDMAN, BJ
APPLIED PHYSICS LETTERS, 1985, 47 (06) : 599 - 601
[26] Formation of nonuniformity in ZnSe/ZnMgSSe quantum well structures during MOVPE on GaAs(001) misoriented by 10° to (111)A plane
Kozlovsky, V. I.
Martovitsky, V. P.
PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 5009 - 5012
[27] STRUCTURE AND LOCATION OF MISFIT DISLOCATIONS IN INGAAS EPILAYERS GROWN ON VICINAL GAAS(001) SUBSTRATES
CHEN, Y
ZAKHAROV, ND
WERNER, P
LILIENTALWEBER, Z
WASHBURN, J
KLEM, JF
TSAO, JY
APPLIED PHYSICS LETTERS, 1993, 62 (13) : 1536 - 1538
[28] Surface structure and magnetic properties of MnAs epilayers grown on vicinal GaAs(001) substrates
Graff, I. L.
Vidal, F.
Marangolo, M.
Eddrief, M.
Zheng, Y.
Etgens, V. H.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (11)
[29] Growth morphology and magnetism of MnAs/GaAs(001) epilayers
Etgens, VH
Eddrief, M
Mosca, DH
Marangolo, M
George, JM
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2001, 226 (PART II) : 1577 - 1579
[30] Optical properties of ZnSe1-xSx epilayers grown on misoriented GaAs substrates
Chou, WC
Yang, CS
Chu, AHM
Yeh, AJ
Ro, CS
Lan, WH
Tu, SL
Tu, RC
Chou, SC
Su, YK
JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) : 2245 - 2250

← 1 2 3 4 5 →