DISLOCATION VELOCITIES AND ELECTRONIC DOPING IN SILICON

被引：43
|
作者：
KULKARNI, SB
WILLIAMS, WS
机构：
[1] UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[4] UNIV ILLINOIS,DEPT CERAMIC ENGN,URBANA,IL 61801
来源：
JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 10期
关键词：
D O I：
10.1063/1.322433
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4318 / 4325
页数：8
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