DISLOCATION VELOCITIES AND ELECTRONIC DOPING IN SILICON

被引：43
|
作者：
KULKARNI, SB
WILLIAMS, WS
机构：
[1] UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[4] UNIV ILLINOIS,DEPT CERAMIC ENGN,URBANA,IL 61801
来源：
JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 10期
关键词：
D O I：
10.1063/1.322433
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4318 / 4325
页数：8
相关论文
共 50 条
  • [31] DISLOCATION VELOCITIES AND DEFORMATION IN MANTLE
    VAISNYS, JR
    GEOPHYSICAL JOURNAL OF THE ROYAL ASTRONOMICAL SOCIETY, 1967, 14 (1-4): : 67 - &
  • [32] DISLOCATION VELOCITIES IN INAS AND GASB
    CHOI, SK
    MIHARA, M
    NINOMIYA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (02) : 329 - 333
  • [33] Dislocation velocities at low temperatures
    Kim, CS
    Galligan, JM
    ACTA MATERIALIA, 1996, 44 (02) : 775 - 779
  • [34] DISLOCATION VELOCITIES IN INDIUM ANTIMONIDE
    STEINHAR.H
    SCHAFER, S
    ACTA METALLURGICA, 1971, 19 (02): : 65 - &
  • [35] The impact of germanium doping on the dislocation distribution in directional solidified mc-silicon
    Bellmann, M. P.
    Kaden, T.
    Kressner-Kiel, D.
    Friedl, J.
    Moeller, H. J.
    Arnberg, L.
    JOURNAL OF CRYSTAL GROWTH, 2011, 325 (01) : 1 - 4
  • [36] Effect of silicon doping on the electronic and optical properties of phosphorous nanotubes
    Badehian, Hojat Allah
    Gharbavi, Khadijeh
    OPTIK, 2021, 225
  • [37] The Effects of Doping on the Electronic Characteristics and Adsorption Behavior of Silicon Polyprismanes
    Grishakov, Konstantin
    Katin, Konstantin
    Maslov, Mikhail
    COMPUTATION, 2020, 8 (02)
  • [38] PHOTOCONDUCTIVITY AND ELECTRONIC DOPING EFFECTS IN HYDROGENATED AMORPHOUS-SILICON
    MCMAHON, TJ
    MADAN, A
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5302 - 5305
  • [39] Electronic Structure and Infrared Light Emission in Dislocation-Engineered Silicon
    Hsin, Cheng-Lun
    Teng, Hsu-Shen
    Lin, Hsiang-Yuan
    Cheng, Tzu-Hsuan
    Cheng, Chao-Chia
    Liu, Po-Liang
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2015, 14 (03) : 399 - 403
  • [40] ELECTRONIC STATES ASSOCIATED WITH 60DEGREES EDGE DISLOCATION IN SILICON
    JONES, R
    PHILOSOPHICAL MAGAZINE, 1977, 35 (01): : 57 - 64
12345