EXPERIMENTAL INVESTIGATION OF THE INFRARED-ABSORPTION SATURATION IN P-TYPE GERMANIUM AND SILICON

被引:13
|
作者
JAMES, RB [1 ]
SCHWEIG, E [1 ]
SMITH, DL [1 ]
MCGILL, TC [1 ]
机构
[1] CALTECH,PASADENA,CA 91125
关键词
D O I
10.1063/1.93056
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:231 / 233
页数:3
相关论文
共 50 条
  • [31] DETERMINATION OF HOT CARRIER DISTRIBUTION FUNCTION FROM ANISOTROPIC INFRARED ABSORPTION IN P-TYPE GERMANIUM
    BRAY, R
    PINSON, WE
    PHYSICAL REVIEW LETTERS, 1963, 11 (06) : 268 - +
  • [32] ANNEALING EXPERIMENTS ON REACTOR IRRADIATED P-TYPE GERMANIUM .2. INFRARED ABSORPTION STUDIES
    ELDROS, R
    ARKIV FOR FYSIK, 1965, 28 (05): : 447 - &
  • [33] INFRARED ABSORPTION SPECTRA OF P-TYPE CDTE
    VUL, BM
    SALMAN, VM
    CHAPNIN, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 52 - +
  • [34] Silicon-germanium-boron amorphous alloy on p-type Si as infrared Schottky detector
    Gomez, JGS
    Jacome, AT
    ICCDCS 98: PROCEEDINGS OF THE 1998 SECOND IEEE INTERNATIONAL CARACAS CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS, 1998, : 75 - 78
  • [35] FREE CARRIER ABSORPTION IN P-TYPE SILICON
    HARA, H
    NISHI, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (06) : 1222 - &
  • [36] INVESTIGATION OF DIFFUSION PARAMETERS OF BOROSILICATE-SILICON SYSTEM BY INFRARED-ABSORPTION
    HOFFMANN, G
    NAGY, A
    PUSKAS, L
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (09) : 1044 - 1052
  • [37] Overcoming absorption saturation with doping in p-type quantum well infrared photodetectors: modeling and experiment
    Szmulowicz, F
    Ehret, J
    Mahalingam, K
    Hegde, S
    Solomon, J
    Tomich, DH
    Landis, G
    Brown, GJ
    Oogarah, T
    Liu, HC
    INFRARED PHYSICS & TECHNOLOGY, 2003, 44 (5-6) : 331 - 336
  • [38] INVESTIGATION OF PIEZORESISTANCE AND OF PIEZOHALL EFFECT IN P-TYPE GERMANIUM
    KOZEEV, EV
    KRAVCHENKO, AF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1168 - 1171
  • [39] INFRARED-ABSORPTION INVESTIGATION OF RADIATION DEFECTS IN ION-DOPED SILICON
    BARANOVA, EK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (02): : 322 - &
  • [40] INFRARED-ABSORPTION OF SILICON IRRADIATED BY PROTONS
    GERASIMENKO, NN
    ROLLE, M
    CHENG, LJ
    LEE, YH
    CORELLI, JC
    CORBETT, JW
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 90 (02): : 689 - 695