EXPERIMENTAL INVESTIGATION OF THE INFRARED-ABSORPTION SATURATION IN P-TYPE GERMANIUM AND SILICON

被引：13

作者：

JAMES, RB ^{[1
]}

SCHWEIG, E ^{[1
]}

SMITH, DL ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 03期

关键词：

D O I：

10.1063/1.93056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：231 / 233

页数：3

共 50 条

[21] THEORY OF INFRARED-ABSORPTION IN SILICON
WINER, K
CARDONA, M
PHYSICAL REVIEW B, 1987, 35 (15): : 8189 - 8195
[22] MULTIPHONON INFRARED-ABSORPTION IN SILICON
PRADHAN, MM
GARG, RK
ARORA, M
INFRARED PHYSICS, 1987, 27 (01): : 25 - 30
[23] INFRARED-ABSORPTION BY INTERSTITIAL OXYGEN IN GERMANIUM-DOPED SILICON-CRYSTALS
YAMADAKANETA, H
KANETA, C
OGAWA, T
PHYSICAL REVIEW B, 1993, 47 (15): : 9338 - 9345
[24] ANISOTROPY OF CONDUCTIVITY DUE TO WARM HOLES IN P-TYPE GERMANIUM AND P-TYPE SILICON
ROTH, EP
TSCHULENA, G
SEEGER, K
ZEITSCHRIFT FUR PHYSIK, 1968, 212 (02): : 183 - +
[25] RESONANCE LEVELS IN A STRONGLY COMPENSATED P-TYPE PBTE DEDUCED FROM INFRARED-ABSORPTION DATA
VEIS, AN
KAIDANOV, VI
KRUPITSKAYA, RY
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (02): : 215 - 216
[26] INVESTIGATION OF THERMAL OXIDE-FILMS OF SILICON BY INFRARED-ABSORPTION
GOPAL, V
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 11 (02): : 783 - &
[27] INFRARED-ABSORPTION IN HYDROGENATED AMORPHOUS AND CRYSTALLIZED GERMANIUM
BERMEJO, D
CARDONA, M
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 421 - 430
[28] INFRARED-ABSORPTION OF N-TYPE AND P-TYPE FE-DOPED INP AND MAPPING OF THE FE DISTRIBUTION
MOSEL, F
SEIDL, A
HOFMANN, D
MULLER, G
APPLIED SURFACE SCIENCE, 1991, 50 (1-4) : 364 - 368
[29] ABSORPTION BY FREE AND BOUND HOLES IN P-TYPE GERMANIUM
TEITLER, S
LAX, M
BURSTEIN, E
PHYSICAL REVIEW, 1955, 98 (05): : 1561 - 1561
[30] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON
KANE, EO
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

← 1 2 3 4 5 →