ELECTRON-BEAM TESTING OF INTEGRATED-CIRCUITS THROUGH INSULATING LAYERS - ERROR CORRECTION BY NUMERICAL-SIMULATION

被引：0

作者：

FREMONT, H ^{[1
]}

TOUBOUL, A ^{[1
]}

DANTO, Y ^{[1
]}

机构：

[1] UNIV BORDEAUX 1,ENSERB,IXL,CNRS,URA 846,F-33405 TALENCE,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1990年 / 25卷 / 06期

关键词：

D O I：

10.1051/rphysap:01990002506049900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：499 / 507

页数：9

共 45 条

[21] ADVANCES IN ELECTRON-BEAM INDUCED-CURRENT ANALYSIS OF INTEGRATED-CIRCUITS
SCHICK, JD
SCANNING ELECTRON MICROSCOPY, 1985, : 55 - 66
[22] COMPUTERIZED ELECTRON-BEAM MACHINE MAKES ADVANCES IN FABRICATION OF INTEGRATED-CIRCUITS
DRESSNER, S
COMPUTERS AND PEOPLE, 1975, 24 (11): : 25 - 26
[23] FORMATION OF CRYSTALLINE SILICON LAYERS FOR 3-DIMENSIONAL INTEGRATED-CIRCUITS USING DUAL ELECTRON-BEAM RECRYSTALLIZATION
MCMAHON, RA
HASKO, DG
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HOPPER, GF
GODFREY, DJ
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[24] ELECTRON-BEAM FABRICATED HIGH-SPEED DIGITAL GAAS INTEGRATED-CIRCUITS
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[25] PRIMARY BEAM ADDRESS ERROR REDUCTION IN E-BEAM TESTING OF PACKAGED INTEGRATED-CIRCUITS
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MICROELECTRONIC ENGINEERING, 1994, 24 (1-4) : 147 - 154
[26] NUMERICAL-SIMULATION FOR METASTABLE STATES DEEXCITATION IN ELECTRON-BEAM EVAPORATION PROCESS
NISHIMURA, A
SHIBATA, T
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 1995, 32 (09) : 905 - 911
[27] A DIRECT WRITING ELECTRON-BEAM LITHOGRAPHY BASED PROCESS FOR THE REALIZATION OF OPTOELECTRONIC INTEGRATED-CIRCUITS
HUGHES, WA
BARNARD, JA
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 517 : 28 - 33
[28] PENETRATION OF AN ELECTRON-BEAM IN A SOLID MATERIAL - A SIMPLE-MODEL AND A NUMERICAL-SIMULATION
DAPOR, M
PHYSICS LETTERS A, 1990, 143 (03) : 160 - 164
[29] NUMERICAL-SIMULATION OF CYLINDRICAL AMPLIFIERS HAVING AUTOMATIC REGENERATION OF ELECTRON-BEAM ON COLLECTOR
TERENTYEV, AA
EREMIN, VN
ILYIN, EM
BAIBURIN, VB
RADIOTEKHNIKA I ELEKTRONIKA, 1989, 34 (09): : 1907 - 1911
[30] ELECTRON-BEAM RESISTS FOR LIFT-OFF PROCESSING WITH POTENTIAL APPLICATION TO JOSEPHSON INTEGRATED-CIRCUITS
MAGERLEIN, JH
WEBB, DJ
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (05) : 554 - 562

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