THE IMPORTANCE OF SELF-INTERSTITIALS TO THE DEFECT FORMATION IN SILICON DURING QUENCHING

被引：3
|
作者：
REICHEL, J [1 ]
REICHE, M [1 ]
机构：
[1] ACAD SCI GDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOP,O-4050 HALLE,GERMANY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 119卷 / 02期
关键词：
D O I：
10.1002/pssa.2211190238
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K103 / K105
页数：3
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