THE IMPORTANCE OF SELF-INTERSTITIALS TO THE DEFECT FORMATION IN SILICON DURING QUENCHING

被引：3

作者：

REICHEL, J ^{[1
]}

REICHE, M ^{[1
]}

机构：

[1] ACAD SCI GDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOP,O-4050 HALLE,GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 119卷 / 02期

关键词：

D O I：

10.1002/pssa.2211190238

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K103 / K105

页数：3

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