THE IMPORTANCE OF SELF-INTERSTITIALS TO THE DEFECT FORMATION IN SILICON DURING QUENCHING

被引：3
|
作者：
REICHEL, J [1 ]
REICHE, M [1 ]
机构：
[1] ACAD SCI GDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOP,O-4050 HALLE,GERMANY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 119卷 / 02期
关键词：
D O I：
10.1002/pssa.2211190238
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K103 / K105
页数：3
相关论文
共 50 条
  • [1] Self-interstitials in silicon
    Seeger, A
    SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2, 1998, : 215 - 219
  • [2] Self-interstitials in silicon
    Okino, T
    Shimosaki, T
    Takaue, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11): : 6592 - 6594
  • [3] THE DIFFUSIVITY OF SILICON SELF-INTERSTITIALS
    TAYLOR, W
    MARIOTON, BPR
    TAN, TY
    GOSELE, U
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1989, 112 (1-2): : 131 - 150
  • [4] Self-interstitials in irradiated silicon
    Mukashev, BN
    Abdullin, KA
    Gorelkinskii, YV
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 541 - 546
  • [5] FORMATION OF SWIRL DEFECTS IN SILICON BY AGGLOMERATION OF SELF-INTERSTITIALS
    FOLL, H
    GOSELE, U
    KOLBESEN, BO
    JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) : 90 - 108
  • [6] NEW INSIGHT INTO SILICIDE FORMATION - THE CREATION OF SILICON SELF-INTERSTITIALS
    RONAY, M
    SCHAD, RG
    PHYSICAL REVIEW LETTERS, 1990, 64 (17) : 2042 - 2045
  • [7] HYDROGEN INTERACTIONS WITH SELF-INTERSTITIALS IN SILICON
    VAN DE WALLE, CG
    NEUGEBAUER, J
    PHYSICAL REVIEW B, 1995, 52 (20): : 14320 - 14323
  • [8] Self-interstitials and nanoclusters in crystalline silicon
    Mukashev, BN
    Gorelkinskii, YV
    Abdullin, KA
    Physics of Semiconductors, Pts A and B, 2005, 772 : 107 - 108
  • [9] DIFFUSIVITY OF SELF-INTERSTITIALS AND VACANCIES IN SILICON
    OKINO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (6B): : L856 - L858
  • [10] NATURE OF COVALENT BONDING OF SELF-INTERSTITIALS IN SILICON
    LANNOO, M
    SCHLUTER, M
    PHYSICAL REVIEW B, 1985, 31 (08): : 5468 - 5470
12345