DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100)SI/SIO2 INTERFACE DEFECTS (VOL 77, PG 6205, 1995)

被引：9
|
作者：
STATHIS, JH
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 08期
关键词：
D O I：
10.1063/1.360786
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5215 / 5215
页数：1
相关论文
共 50 条
  • [21] HYDROGEN AND CHLORINE DETECTION AT THE SIO2/SI INTERFACE
    TSONG, IST
    MONKOWSKI, MD
    MONKOWSKI, JR
    WINTENBERG, AL
    MILLER, PD
    MOAK, CD
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 191 (1-3): : 91 - 95
  • [22] KINETICS OF HYDROGEN ADSORPTION AT THE PD/SIO2 INTERFACE
    RYE, RR
    RICCO, AJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1987, 194 : 118 - COLL
  • [23] Hydrogen passivation kinetics of Si nanocrystals in SiO2
    Wilkinson, AR
    Elliman, RG
    OPTOELECTRONICS OF GROUP-IV-BASED MATERIALS, 2003, 770 : 81 - 86
  • [24] Thermally induced Si(100)/SiO2 interface degradation in poly-Si/SiO2/Si structures
    Afanas'ev, VV
    Stesmans, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (05) : G279 - G282
  • [25] Passivation of Pb0 and Pb1 interface defects in thermal (100) Si/SiO2 with molecular hydrogen
    Appl Phys Lett, 15 (2076):
  • [26] SiO2/Si interface defects in HKMG stack fabrication
    Nunomura, Shota
    Morita, Yukinori
    SURFACES AND INTERFACES, 2025, 56
  • [27] Electrical defects at the SiO2/Si interface studied by EPR
    Stathis, JH
    FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES, 1998, 47 : 325 - 333
  • [28] Investigations on the Si/SiO2 interface defects of silicon nanowires
    Cui, L.
    Xia, W. W.
    Wang, F.
    Yang, L. J.
    Hu, Y. J.
    PHYSICA B-CONDENSED MATTER, 2013, 409 : 47 - 50
  • [29] Interface defects detection and quantification on a Si/SiO2 structure
    Elias, Rawad
    Ziade, Pierre
    Habchi, Roland
    MICROELECTRONICS INTERNATIONAL, 2018, 35 (01) : 12 - 17
  • [30] Discrete Electron States at the Si(100)/SiO2 Interface
    Kirillova S.I.
    Primachenko V.E.
    Serba A.A.
    Chernobai V.A.
    Russian Microelectronics, 2000, 29 (5) : 345 - 348
12345