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- [3] Dissociation kinetics of hydrogen-passivated Pb defects at the (111)Si/SiO2 interface PHYSICAL REVIEW B, 2000, 61 (12): : 8393 - 8403
- [4] Physical model and numerical results of dissociation kinetics of hydrogen-passivated Si/SiO2 interface defects SEMICONDUCTOR PROCESS AND DEVICE PERFORMANCE MODELLING, 1998, 490 : 71 - 76
- [5] DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (111) SI-SIO2 INTERFACE DEFECTS PHYSICAL REVIEW B, 1990, 42 (06): : 3444 - 3453
- [7] Physical model and numerical results of dissociation kinetics of hydrogen-passivated Si/SiO2 interface defects 1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1997, : 46 - 49
- [8] Reaction of atomic hydrogen with the Si(100)/SiO2 interface defects PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 419 - 420
- [9] Structure and oxidation kinetics of the Si(100)-SiO2 interface PHYSICAL REVIEW B, 1999, 59 (15): : 10132 - 10137