BULK SILICIDES AND SI-METAL INTERFACE REACTION - PD2SI

被引：39

作者：

FRANCIOSI, A ^{[1
]}

WEAVER, JH ^{[1
]}

机构：

[1] UNIV WISCONSIN, CTR SYNCHROTRON RADIAT, STOUGHTON, WI 53589 USA

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.27.3554

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3554 / 3561

页数：8

共 50 条

[11] RADIOACTIVE METAL TRACER INVESTIGATION OF PD2SI FORMATION
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[12] INTERDIFFUSION OF SI IN PD AND PD2SI AT ROOM-TEMPERATURE
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[13] IRRADIATION STABILITY OF PD2SI
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[14] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI
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[17] OPTICAL-PROPERTIES OF PD2SI
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[18] On the barrier heights distribution in Pd2Si/Si Schottky diodes
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[19] DIRECT OBSERVATION OF EPITAXIAL ISLANDS OF PD2SI ON (001) SI
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[20] UNIFORM MECHANISM OF FERMI-LEVEL PINNING AT THE SI-METAL INTERFACE AND IN BULK SILICON - PHENOMENOLOGICAL MODEL
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