SYNCHROTRON RADIATION STUDIES OF ELECTRONIC-STRUCTURE AND SURFACE-CHEMISTRY OF GAAS, GASB, AND INP

被引：162

作者：

SPICER, WE

LINDAU, I

GREGORY, PE

GARNER, CM

PIANETTA, P

CHYE, PW

机构：

[1] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305

[2] STANFORD UNIV,SYNCHROTRON RADIAT PROJECT,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.568989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：780 / 785

页数：6

共 28 条

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[3] GASB SURFACES STATES AND SCHOTTKY-BARRIER PINNING [J].

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[4]

CHYE PW, UNPUBLISHED

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FISCHER, TE .

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PHYSICAL REVIEW B, 1974, 10 (12) :5049-5056

[7] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627

[8] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605

[9] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[10]

Freeouf J. L., 1975, Critical Reviews in Solid State Sciences, V5, P245, DOI 10.1080/10408437508243482

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