INTRINSIC (111) SURFACE STATES OF GE, GAAS, AND ZNSE

被引：51

作者：

CHADI, DJ

COHEN, ML

机构：

[1] UNIV CALIF,DEPT PHYS,BERKELEY,CA 94720

[2] LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.11.732

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：732 / 737

页数：6

共 11 条

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COHEN, ML .

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[6]

LUDEKE R, UNPUBLISHED

[7] TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI(111) [J].

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PHILLIPS, JC .

SOLID STATE COMMUNICATIONS, 1974, 14 (06) :439-441

[8] REALISTIC TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI AND GE (111) [J].

PANDEY, KC ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1974, 32 (25) :1433-1436

[9]

RANKE W, 1973, SOLID STATE COMMUN, V13, P705, DOI 10.1016/0038-1098(73)90464-X

[10] SURFACE AND BULK CONTRIBUTIONS TO ULTRAVIOLET PHOTOEMISSION SPECTRA OF SILICON [J].

ROWE, JE ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1974, 32 (08) :421-424

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