ADSORPTION OF OXYGEN ON CLEAN CLEAVED (110) GALLIUM-ARSENIDE SURFACES

被引：62

作者：

DORN, R ^{[1
]}

LUTH, H ^{[1
]}

RUSSELL, GJ ^{[1
]}

机构：

[1] RHEIN WESTFAL TH,PHYS INST 2,AACHEN,FED REP GER

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.10.5049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5049 / 5056

页数：8

共 18 条

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[2] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J].

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GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1971, 26 (02) :587-&

[3] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .2. [J].

DORN, R ;

LUTH, H ;

IBACH, H .

SURFACE SCIENCE, 1974, 42 (02) :583-594

[4]

GREGORY PH, UNPUBLISHED

[5]

Hayward D.O., 1964, CHEMISORPTION, P67

[6] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].

IBACH, H ;

HORN, K ;

DORN, R ;

LUTH, H .

SURFACE SCIENCE, 1973, 38 (02) :433-454

[7]

IBACH H, TO BE PUBLISHED

[8]

LUTH H, TO BE PUBLISHED

[9]

MACRAE AU, 1964, J APPL PHYS, V35, P1629

[10] MEASUREMEMT OF THICKNESS AND REFRACTIVE INDEX OF VERY THIN FILMS AND OPTICAL PROPERTIES OF SURFACES BY ELLIPSOMETRY [J].

MCCRACKIN, FL ;

PASSAGLIA, E ;

STROMBERG, RR ;

STEINBERG, HL .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1963, A 67 (04) :363-+

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